Charge trap type non-volatile memory device and method for fabricating the same

ABSTRACT

There is provided a charge trap type non-volatile memory device and a method for fabricating the same, the charge trap type non-volatile memory device including: a tunnel insulation layer formed over a substrate; a charge trap layer formed over the tunnel insulation layer, the charge trap layer including a charge trap polysilicon thin layer and a charge trap nitride-based layer; a charge barrier layer formed over the charge trap layer; a gate electrode formed over the charge barrier layer; and an oxide-based spacer formed over sidewalls of the charge trap layer and provided to isolate the charge trap layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority of Korean patent applicationnumber 10-2008-0074139, filed on Jul. 29, 2008, which is incorporatedherein by reference in its entirety.

BACKGROUND

The present disclosure relates to a semiconductor device and a methodfor fabricating the same, and more particularly, to a charge trap typenon-volatile memory device and a method for fabricating the same.

A non-volatile memory device refers to a memory device which canmaintain stored data intact even when a power supply is cut off. Inparticular, a memory device which stores data by storing or erasingcharges in a floating gate is referred to as a floating gate typenon-volatile memory device.

A typical floating gate type non-volatile memory device includes atunnel insulation layer, a floating gate, a charge barrier layer, and acontrol gate formed over a substrate. A typical floating gate typenon-volatile memory device stores data by injecting or emitting chargesin the floating gate.

However, there is a limitation as to achieving a large integration scalein a floating gate type non-volatile memory device because as thethickness of a tunnel insulation layer becomes greater, a higheroperation voltage may be needed causing its peripheral circuitry tobecome complicated.

Therefore, a typical method presents a charge trap type non-volatilememory device as a type of non-volatile memory device. Herein, a chargetrap type non-volatile memory device is described in detail with adrawing.

FIG. 1 illustrates a cross-sectional view of a typical charge trap typenon-volatile memory device. The charge trap type non-volatile memorydevice includes a tunnel insulation layer 110, a charge trap layer 120,a charge barrier layer 130, a gate electrode 140, and a hard maskpattern 150 formed over a substrate 100.

The tunnel insulation layer 110 is formed as an energy barrier layer forcharge tunneling. The tunnel insulation layer 110 may include anoxide-based layer.

The charge trap layer 120 stores charges which tunneled through thetunnel insulation layer 110. Thus, the charge trap layer 120substantially functions as a data storing unit. The charge trap layer120 may include a nitride-based layer.

The charge barrier layer 130 is formed to prevent charges from passingthrough the charge trap layer 120 and moving upward.

At this time, nitride-based spacers 160 are formed over sidewalls of thehard mask pattern 150 and the gate electrode 140 to prevent oxidation ofthe gate electrode 140 during a subsequent process.

Reference denotation ‘A’ represents a charge trap structure A whichincludes the tunnel insulation layer 110, the charge trap layer 120, thecharge barrier layer 130, the gate electrode 140, the hard mask pattern150, and the nitride-based spacers 160. An oxide-based spacer 170 isformed over the charge trap structure A.

The typical charge trap type non-volatile memory device having the abovedescribed structure stores or erases charges in a deep level trap sitein the charge trap layer 120. Thus, the stored charges may not be losteven when the tunnel insulation layer 110 is formed to a smallthickness. Also, the typical charge trap type non-volatile memory devicemay be operated at a low operation voltage. Furthermore, the integrationscale of a semiconductor device may be improved compared to a floatinggate type non-volatile memory device.

However, the typical charge trap type non-volatile memory device mayhave limitations as follows. For the charge trap layer 120 including anitride-based layer, there may be a large density difference in a trapsite depending on the composition of silicon (Si) and nitrogen (N) ofthe nitride-based layer. Thus, charges stored in the charge trap layer120 may not be dispersed evenly.

In particular, storage and erasure of charges may not be performedsmoothly because the trap site is concentrated on an interface betweenthe charge barrier layer 130 and the charge trap layer 120 and theinterface state is unstable. Such limitation may deteriorate dataretention and endurance of the memory device.

Furthermore, sidewalls of the tunnel insulation layer 110 and the chargetrap layer 120 are not protected by the nitride-based spacers 160.Therefore, the sidewalls of the tunnel insulation layer 110 and thecharge trap layer 120 may be exposed and damaged during a subsequentprocess.

In the typical method, an oxidation process is performed on thesubstrate structure including the charge trap structure A to form theoxide-based spacer 170. The oxide-based spacer 170 is formed so that thetunnel insulation layer 110 and the charge trap layer 120 may bereinforced and prevented from getting damaged.

However, there are limitations as to preventing damage by forming theoxide-based spacer 170 on the sidewalls of the layers that constitutethe charge trap structure A due to structural characteristics of thecharge trap structure A configured in a multiple-layer stack structure.As a result, damage in the charge trap layer 120 may induce loss of datastored in the memory device, i.e., charges, and thus, deteriorate dataretention of the memory device.

On the other hand, if the oxidation process is performed for a longerperiod of time in order to sufficiently reinforce the damaged sidewalls,there may arise other limitations such as oxidation of the substrate 100or change in the impurity concentration level and depth in source/drainregions.

Furthermore, charges may be lost through a portion of the sidewall ofthe charge trap layer 120, as represented with reference denotation ‘B’,because an interface between the charge trap layer 120 and theoxide-based spacer 170 is not stabilized even after the oxide-basedspacer 170 is formed over the sidewalls of the charge trap layer 120.

SUMMARY

One or more embodiments disclosed in the present application aredirected to providing a memory device having a charge trap layer whichincludes a polysilicon thin layer and a nitride-based layer and a methodfor fabricating the same.

In accordance with one or more embodiments, there is provided a chargetrap type non-volatile memory device, including: a tunnel insulationlayer formed over a substrate; a charge trap layer formed over thetunnel insulation layer, the charge trap layer including a charge trappolysilicon thin layer and a charge trap nitride-based layer; a chargebarrier layer formed over the charge trap layer; a gate electrode formedover the charge barrier layer; and an oxide-based spacer formed oversidewalls of the charge trap layer and provided to isolate the chargetrap layer.

In accordance with one or more embodiments, there is provided a methodfor fabricating a charge trap type non-volatile memory device,including: forming a tunnel insulation layer over a substrate; forming acharge trap layer over the tunnel insulation layer, the charge traplayer including a charge trap polysilicon thin layer and a charge trapnitride-based layer; forming a charge barrier layer over the charge traplayer; forming a gate electrode conductive layer over the charge barrierlayer; etching the gate electrode conductive layer, the charge barrierlayer, the charge trap layer, and the tunnel insulation layer to form acharge trap structure; and forming an oxide-based spacer over sidewallsof the etched charge trap layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of a typical charge trap typenon-volatile memory device.

FIGS. 2A to 2G show cross-sectional views illustrating a method offabricating a charge trap type non-volatile memory device in accordancewith one embodiment.

DESCRIPTION OF EMBODIMENTS

Other objects and advantages of the present disclosure can be understoodby the following description, and will become apparent with reference toone or more embodiments.

One or more embodiments of the present disclosure relate to a chargetrap type non-volatile memory device which includes a charge trap layerhaving a polysilicon thin layer and a nitride-based layer. The chargetrap type non-volatile memory device may improve the operation rate ofcharge storage and erasure by dispersedly storing charges in thepolysilicon thin layer and the nitride-based layer. Furthermore, thecharge trap type non-volatile memory device may prevent loss of chargesby effectively isolating the charge trap layer using an oxide-basedlayer formed to enclose sidewalls of the charge trap layer. Therefore,data retention and reliability of the memory device may be enhanced.

Hereafter, one or more of various embodiments of the present disclosurewill be described in detail. Regarding the drawings, the illustratedthickness and spacing distance may be exaggerated for convenience. Inthe description of the present invention, any portions irrelevant to thesubstance of the present disclosure may be omitted. Furthermore, thesame or like reference numerals through out the various embodiments ofthe present invention represent the same or like elements in differentdrawings. It will be understood that when a layer is referred to asbeing “on/under” another layer or substrate, it can be directly on/underthe other layer or substrate, or intervening layers may also be present.In addition, when a layer is referred to as being ‘between’ two layers,it can be the only layer between the two layers, or one or moreintervening layers may also be present.

FIGS. 2A to 2G show cross-sectional views illustrating a method offabricating a charge trap type non-volatile memory device in accordancewith one embodiment.

Referring to FIG. 2A, a tunnel insulation layer 210 is formed over asubstrate 200. The tunnel insulation layer 210 is formed as an energybarrier layer for charge tunneling. The tunnel insulation layer 210 mayinclude an oxide-based layer formed by a radical oxidation process.

The radical oxidation process may be performed at a temperature rangingfrom approximately 750° C. to approximately 950° C. The occurrence ofundesirable formation in the tunnel insulation layer 210 may beminimized by including nitrogen during the oxidation process. Forinstance, the tunnel insulation layer 210 may be formed to a thicknessranging from approximately 40 Å to approximately 60 Å. Also, anannealing process may be performed using nitrous oxide (N₂O) gas ornitrogen oxide (NO) gas.

A charge trap polysilicon thin layer 220A is formed over the tunnelinsulation layer 210. For instance, the charge trap polysilicon thinlayer 220A may be formed to a thickness ranging from approximately 10 Åto approximately 30 Å. However, if it is difficult to form the chargetrap polysilicon thin layer 220A to the above described thickness due tolimitations arising during the process, the charge trap polysilicon thinlayer 220A may be formed using the process shown below.

An amorphous silicon layer is formed to a certain thickness over thetunnel insulation layer 210. For instance, the amorphous silicon layermay be formed to a thickness ranging from approximately 50 Å toapproximately 100 Å.

The amorphous silicon layer may be formed at a temperature ranging fromapproximately 480° C. to approximately 550° C. using silane (SiH₄) gasor disilane (Si₂H₆) gas in a high-temperature low-pressure batch typefurnace.

Otherwise, an amorphous silicon layer, not doped with impurities, may beformed using a single wafer type chamber, or an amorphous silicon layer,doped with impurities, may be formed using phosphine (PH₃) gas. At thistime, the rate of charge storage and erasure of the memory device may becontrolled by controlling the impurity doping concentration level.

The amorphous silicon layer is crystallized and oxidized using anoxidation process. The amorphous silicon layer is crystallized to form apolysilicon layer and, at substantially the same time, oxidized to forman oxide layer. An upper portion is oxidized without oxidizing a bottomportion by controlling the oxidation process. As a result, a thin layerstructure which includes the non-oxidized remaining polysilicon thinlayer in the bottom portion and the oxide layer in the upper portion maybe formed.

Therefore, it may be possible to form an oxide layer having a uniformthickness by performing an oxidation process to crystallize and form theoxide layer at substantially the same time, and thus forming a remainingpolysilicon thin layer with a uniform thickness. For instance, theremaining polysilicon thin layer may be formed to a thickness rangingfrom approximately 10 Å to approximately 30 Å.

The oxidation process of the amorphous silicon layer may be performed ata temperature ranging from approximately 700° C. to approximately 1,000°C. using a high-temperature low-pressure oxidation method. Also, theoxidation process may be performed using a wet, dry, or radicaloxidation method.

A wet etch process is performed to remove the oxide layer using theremaining polysilicon thin layer as an etch stop layer. For instance,the wet etch process may be performed using hydrogen fluoride (HF) orbuffer oxide etchant (BOE), and thus, the remaining polysilicon thinlayer may be formed to have a thickness ranging from approximately 10 Åto approximately 30 Å over the tunnel insulation layer 210.Consequently, the charge trap polysilicon thin layer 220A having auniform thickness is formed.

Referring to FIG. 2B, a charge trap nitride-based layer 220B is formedover the charge trap polysilicon thin layer 220A. Thus, a charge traplayer 220 including the charge trap polysilicon thin layer 220A and thecharge trap nitride-based layer 220B is formed.

For instance, the charge trap nitride-based layer 220B may be formedusing a low pressure chemical vapor deposition (LPCVD) method or aplasma enhanced chemical vapor deposition (PECVD) method at atemperature ranging from approximately 300° C. to approximately 650° C.

At this time, the charge trap nitride-based layer 220B may be formed tohave a ratio of silicon (Si) to nitrogen (N) ranging approximately1:1.30-1.36 and a thickness ranging from approximately 30 Å toapproximately 70 Å. At this time, the process may be controlled in amanner that an interfacial oxide layer is not formed between the chargetrap nitride-based layer 220B and the charge trap polysilicon thin layer220A.

Furthermore, the charge trap nitride-based layer 220B may include astack structure which includes a first nitride-based layer and a secondnitride-based layer, wherein the second nitride-based layer has adifferent nitrogen ratio from that of the first nitride-based layer. Forinstance, the first nitride-based layer may be formed over charge trappolysilicon thin layer 220A, and the second nitride-based layer having ahigher nitrogen content than the first nitride-based layer may be formedover the first nitride-based layer. As a result, charges stored in thecharge trap layer 220 may be prevented from leaking out and thus thefunctions of a subsequent charge barrier layer may be supplemented. Forinstance, the second nitride-based layer may be formed to have a ratioof Si to N ranging approximately 1:1.33-2.0 and a thickness ranging fromapproximately 10 Å to approximately 30 Å.

The charge trap type non-volatile memory device in accordance with oneor more embodiments dispersedly stores charges in the charge trappolysilicon thin layer 220A and the charge trap nitride-based layer 220Bas described above. As a result, the charge trap type non-volatilememory device may stably store and erase charges compared to a typicalmethod. Furthermore, the rate of charge storage and erasure may beimproved in the charge trap type non-volatile memory device inaccordance with one or more embodiments.

Referring to FIG. 2C, a charge barrier layer 230 is formed over thecharge trap layer 220. The charge barrier layer 230 is a type of barrierlayer which is formed to prevent charges from passing through the chargetrap layer 220 and moving upward. For instance, the charge barrier layer230 may include a high-k dielectric layer formed to a thickness rangingfrom approximately 50 Å to approximately 250 Å, wherein k stands for aconstant.

In particular, the charge barrier layer 230 may include a stackstructure which includes one of LaHfO, DyScO and HfAlO compounds and analuminum oxide (Al₂O₃) layer. Also, the charge barrier layer 230 may beformed using an atomic layer deposition (ALD) method, chemical vapordeposition (CVD) method, or plasma vapor deposition (PVD) method.

A thermal treatment process is performed on the substrate structure tocrystallize or induce phase change in the charge barrier layer 230. As aresult, the dielectric constant of the charge barrier layer 230 may beincreased and the charge barrier layer 230 may be further densified. Thethermal treatment process may be performed at a temperature ranging fromapproximately 800° C. to approximately 1,100° C. in a nitrogen (N₂) gasambience or a mixture of N₂ gas and oxygen (O₂) gas ambience.

A gate electrode conductive layer 240 is formed over the charge barrierlayer 230. For instance, the gate electrode conductive layer 240 mayinclude a stack structure of metal and polysilicon. In particular, thegate electrode conductive layer 240 may be formed by forming a tantalum(Ta)-based or titanium (Ti)-based metal, e.g., titanium nitride (TiN),tantalum nitride (TaN), tantalum carbide nitride(TaCN), oxidizedtantalum carbonitride(TaCNO), Ti/TiN, Ti/TaN or tantalumcarbide(TaC),and a polysilicon layer doped with N-type impurities, e.g., phosphorus(P). For instance, the polysilicon layer may be doped at a concentrationlevel ranging from approximately 3×10²⁰ atoms/cc to approximately 1×10²¹atoms/cc to form an N-type gate electrode.

Tungsten silicide (WSix) may be additionally formed over the polysiliconlayer or a combination of tungsten (W) and tungsten nitride (WNx) may beadditionally formed over the polysilicon layer to improve resistance ofa subsequent gate electrode.

A hard mask layer 250 is formed over the gate electrode conductive layer240. For instance, the hard mask layer 250 may include siliconoxynitride (SiON) or silicon nitride (SiN).

Referring to FIG. 2D, a photoresist pattern (not shown) is formed overthe hard mask layer 250 to form a gate electrode. The hard mask layer250 and the gate electrode conductive layer 240 are etched using thephotoresist pattern to form a hard mask pattern 250A and a gateelectrode 240A.

Referring to FIG. 2E, a spacer insulation layer 260 is formed over thesubstrate structure to prevent abnormal oxidation of the gate electrode240A during a subsequent oxidation process. For instance, the spacerinsulation layer 260 may include a nitride-based layer formed to athickness ranging from approximately 50 Å to approximately 100 Å using aCVD method.

Referring to FIG. 2F, a spacer etch is performed on the spacerinsulation layer 260 (FIG. 2E) to form a spacer 260A over sidewalls ofthe hard mask pattern 250A and the gate electrode 240A. The chargebarrier layer 230, the charge trap layer 220, and the tunnel insulationlayer 210 are etched using the hard mask pattern 250A and the spacer260A as an etch barrier to form a charge barrier pattern 230A, a firstcharge trap pattern 220′, and an etched tunnel insulation layer 210A.Reference denotations 220AA and 220BA represent a charge trappolysilicon thin pattern 220AA and a charge trap nitride-based pattern220BA, respectively. Thus, a charge trap structure C is formed.

The etch process is performed in a manner that the etched tunnelinsulation layer 210A remains with a thickness ranging fromapproximately 10 Å to approximately 30 Å. As a result, damage on thesubstrate 200 may be minimized and an undercut problem, where the tunnelinsulation layer 210 around the charge trap structure C is excessivelyetched, may be prevented.

Referring to FIG. 2G, an oxidation process is performed on the substratestructure to oxidize edge portions of the first charge trap pattern 220′and form an oxide-based spacer 270 over the substrate structure.Reference denotation 220″ represents a second charge trap pattern 220″.

The oxide-based spacer 270 is formed in a bird's beak shape as shownwith reference denotation ‘D’. The oxide-based spacer 270 is formed in amanner to enclose sidewalls of the second charge trap pattern 220″ andthus isolating the second charge trap pattern 220″. Referencedenotations 220AB and 220BB represent an oxidized charge trappolysilicon thin pattern 220AB and an oxidized charge trap nitride-basedpattern 220BB, respectively.

Formation of the bird's beak shape of the oxide-based spacer 270 may beachieved because the charge trap polysilicon thin pattern 220AA is moreeasily oxidized than other layers. In other words, during the oxidationprocess, oxidation starts from edge portions of the charge trappolysilicon thin pattern 220AA and forms the bird's beak shapedoxide-based spacer 270 developing into the charge trap polysilicon thinpattern 220AA, thus forming the oxidized charge trap polysilicon thinpattern 220AB.

In particular, the oxide-based spacer 270 formed over edge portions ofthe oxidized charge trap polysilicon thin pattern 220AB acceleratesoxidation of sidewalls of the charge trap nitride-based pattern 220BA toform the oxidized charge trap nitride-based pattern 220BB.

Therefore, the thickness of the oxide-based spacer 270 enclosing thesidewalls of the second charge trap pattern 220″ becomes greater thanthat of the typical method. Consequently, loss of stored charges may beprevented by substantially isolating the second charge trap pattern220″. Reference denotation C′ represents an oxidized charge trapstructure C′.

For instance, the oxidation process may be performed using a radicaloxidation method at a temperature ranging from approximately 700° C. toapproximately 950° C. so that all layers including Si may be oxidized.Also, the oxide-based spacer 270 may be formed to a thickness rangingfrom approximately 10 Å to approximately 30 Å. As a result, oxidation ofthe substrate 200 may be minimized, and changes in impurityconcentration levels and the depths of source/drain regions may beminimized.

Although not illustrated, an additional oxide-based layer may be formedusing a CVD method after forming the oxide-based spacer 270 using theoxidation process.

While one or more embodiments have been described, it will be apparentto those skilled in the art that various changes and modifications maybe made without departing from the spirit and scope defined in thefollowing claims.

1. A charge trap type non-volatile memory device, comprising: a tunnelinsulation layer formed over a substrate; a charge trap layer formedover the tunnel insulation layer, the charge trap layer including acharge trap polysilicon thin layer and a charge trap nitride-basedlayer; a charge barrier layer formed over the charge trap layer; a gateelectrode formed over the charge barrier layer; and an oxide-basedspacer formed over sidewalls of the charge trap layer and provided toisolate the charge trap layer.
 2. The charge trap type non-volatilememory device of claim 1, wherein the oxide-based spacer is formed byperforming an oxidation process on the charge trap layer.
 3. The chargetrap type non-volatile memory device of claim 1, wherein the charge traplayer comprises a stack structure of the charge trap polysilicon thinlayer and the charge trap nitride-based layer.
 4. The charge trap typenon-volatile memory device of claim 3, wherein the charge trapnitride-based layer comprises: a first nitride-based layer formed overthe charge trap polysilicon thin layer; and a second nitride-based layerformed over the first nitride-based layer and having a higher nitrogencontent than the first nitride-based layer.
 5. The charge trap typenon-volatile memory device of claim 4, wherein the second nitride-basedlayer is formed to have a ratio of silicon (Si) to nitrogen (N) rangingapproximately 1:1.33-2.0.
 6. The charge trap type non-volatile memorydevice of claim 1, wherein the charge trap polysilicon thin layer isformed to a thickness ranging from approximately 10 Å to approximately30 Å.
 7. The charge trap type non-volatile memory device of claim 1,wherein the charge trap nitride-based layer is formed to have a ratio ofSi to N ranging approximately 1:1.30-1.36.
 8. A method of fabricating acharge trap type non-volatile memory device, comprising: forming atunnel insulation layer over a substrate; forming a charge trap layerover the tunnel insulation layer, the charge trap layer including acharge trap polysilicon thin layer and a charge trap nitride-basedlayer; forming a charge barrier layer over the charge trap layer;forming a gate electrode conductive layer over the charge barrier layer;etching the gate electrode conductive layer, the charge barrier layer,the charge trap layer, and the tunnel insulation layer to form a chargetrap structure; and forming an oxide-based spacer over sidewalls of theetched charge trap layer.
 9. The method of claim 8, wherein forming thecharge trap polysilicon thin layer comprises: forming an amorphoussilicon layer over the tunnel insulation layer; crystallizing andoxidizing the amorphous silicon layer using an oxidation process; andremoving an oxide-based layer formed after performing the oxidationprocess to form the charge trap polysilicon thin layer having a uniformthickness.
 10. The method of claim 9, wherein the oxidizing theamorphous silicon layer comprises performing one of a wet oxidationmethod, a dry oxidation method, and a radical oxidation method.
 11. Themethod of claim 8, wherein forming the charge trap nitride-based layercomprises: forming a first nitride-based layer over the charge trappolysilicon thin layer; and forming a second nitride-based layer overthe first nitride-based layer, the second nitride-based layer having ahigher nitrogen content than the first nitride-based layer.
 12. Themethod of claim 8, wherein forming the charge trap structure comprises:etching the gate electrode conductive layer to form a gate electrode;forming a nitride-based spacer over sidewalls of the gate electrode;etching the charge barrier layer, the charge trap layer, and the tunnelinsulation layer using the nitride-based spacer, wherein the tunnelinsulation layer is etched in a manner that a portion of the tunnelinsulation layer remains over the substrate; and performing an oxidationprocess over the substrate structure to form an oxide-based spacer oversidewalls of the etched charge trap layer.
 13. The method of claim 12,wherein the performing the oxidation process comprises using a radicaloxidation method.